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SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230R-HF (RoHS Device) Io = 200 mA VR = 30 Volts 0402(1005) 0.041(1.05) 0.037(0.95) Features Halogen free. Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.026(0.65) 0.022(0.55) Mechanical data Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any. Weight: 0.001 gram(approx.). 0.020(0.50) Typ. 0.012(0.30) Typ. 0.022(0.55) 0.018(0.45) Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRRM VR IO 35 30 200 1 125 -40 +125 +125 V V mA A mW O 8.3ms single half sine-wave superimposed on rate load(JEDEC method) IFSM PD TSTG Tj C C O Electrical Characteristics (at TA=25 C unless otherwise noted) O Parameter Forward voltage Reverse current IF = 200 mA VR = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.6 1 V uA REV:C QW-G1097 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBQR0230R-HF) Fig. 1 - Forward characteristics 1000 1m 125 C O Fig. 2 - Reverse characteristics Forward current (mA ) 100 Reverse current ( A ) 100u 10u 75 C O 10 C O 1u 25 C O 5 12 C 100n -25 C O O 75 25 O C 1 C O 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -25 10n 1n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (PF) 100 Fig.4 - Current derating curve Average forward current(%) f = 1 MHz Ta = 25 C 100 80 10 60 40 20 1 0 5 10 15 20 25 30 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) Fig. 5 - VF Dispersion map 590 O Fig. 6 - IR Dispersion map 1000 900 O Fig. 7 - CT Dispersion map 50 O Ta=25 C IF=200mA n=30pcs Ta=25 C VR=10V n=30pcs 45 Capacitance between terminals(pF) Forward voltage (mV) Reverse current (nA) 580 800 700 600 500 400 300 200 100 AVG:111nA 40 35 30 25 20 15 10 5 0 AVG:18.8pF Ta=25 C F=1MHz VR=0V n=10pcs 570 560 AVG:568mV 550 540 0 REV:C QW-G1097 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 0.75 0.10 0.026 0.004 B 1.15 0.10 0.045 0.004 C 0.60 0.10 0.024 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 0.20 0.512 0.008 QR/0402 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.10 0.079 0.004 T 0.22 0.05 0.009 0.002 W 8.00 0.20 0.315 0.008 W1 13.5 MAX. 0.531 MAX. QR/0402 (mm) (inch) REV:C QW-G1097 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist Marking Code Part Number CDBQR0230R-HF Marking Code BB BB Suggested PAD Layout QR/0402 SIZE (mm) A B C D E 0.750 0.500 0.700 1.250 0.250 (inch) 0.030 0.020 C D A E 0.028 0.049 0.010 B Standard Package Qty per Reel Case Type (Pcs) QR/0402 5000 Reel Size (inch) 7 REV:C QW-G1097 Page 4 Comchip Technology CO., LTD. |
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